Multi-Bias Model for Power Diode Using a Very High Description Language

Hassene Mnif, Montassar Najari, Hekmet Samet, Nouri Masmoudi

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DOI: 10.4236/epe.2010.23029                

Abstract

This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the depletion regions in the device to make the used model available over a wide range of testing conditions without remake the parameters extraction procedure. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured current and voltage waveforms reverse recovery at different range of the operation conditions. The model is developed and simulated with the VHDL-AMS language under Ansoft Simplorer® Environment.

Keywords

Power PIN Diode, VHDL-AMS, Modeling, High Injection, Parameter Extraction

Conflicts of Interest

The authors declare no conflicts of interest.

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