Temperature Dependence of the Raman Intensity and the Bandwidth Close to the Order-Disorder Phase Transition in NaNO₃

Hamit Yurtseven, Sukran Aslan

Department of Physics, Middle East Technical University, Ankara, Turkey.

DOI: 10.4236/opj.2012.223038                

Abstract

We analyze the temperature dependence of the Raman intensity using the experimental data according to a power-law formula close to the order-disorder transition (Tc = 549 K) in NaNO ₃. From this analysis, we extract the value of β = 0.26 as the critical exponent for the order parameter, which indicates a tricritical phase transition in this crystalline system. Using the temperature dependence of the order parameter, the Raman bandwidth is calculated at various temperatures in NaNO₃. Our calculated bandwidths describe adequately the observed behaviour of the order-disorder transition in this crystal.

Keywords

Raman Intensity; Bandwidth; NaNO3

Conflicts of Interest

The authors declare no conflicts of interest.

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