Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device

Nathera Abass Ali Al-Temeeme, Ghaida Salman Muhammed

Physics Department, College of Science, University of Baghdad, Baghdad, Iraq.

DOI: 10.4236/ampc.2012.21009                

Abstract

Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.

Keywords

Porous Silicon; Photochemical Process; Porosity; Structural Properties; Porosity; Electrical Properties

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	L. T. Canham, “Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers,” Applied Physics Letters, Vol. 57, No. 10, 1990, pp. 1046-1048. doi:10.1063/1.103561
[2]	L. Koker and K. W. Kawasaki, “Applications of a Novel Method for Determining the Rate of Production of Photochemical Porous Silicon,” Material Science and Engineering, Vol. 69, No. 70, 2000, pp. 132-135.
[3]	S. Dhar and S. Chakrabarti, “Hall and Photocapacitance Analyses of the Sb-Related Electron Trap in GaAs1–xSbx (x ≤ 0.02) layers Grown by Liquid Phase Epitaxy,” Semiconductor Science and Technology, Vol. 15, No. 6, 2000, pp. 139-140. doi:10.1088/0268-1242/15/6/324
[4]	Z. Fekih, F. Z. Otmani, N. Ghellai and N. E. Chabanne-Sari, “Characterization of the Porous Silicon Layers,” M J Condensed Mate, Vol. 7, No. 1, 2006, pp. 35-37.
[5]	S. M. Ali, A. M. Alwan and O. A. Abbas, “Influence of Laser Irradiation Times on Properties of Porous Silicon,” Um-Salama Science Journal, Vol. 4, No. 4, 2007, pp. 640-645.
[6]	K. Kordas, J. Remes, S. Beke, T. Hu and S. Leppavuori, “Manufacturing of Porous Silicon; Porosity and Thickness Dependence on Electrolyte Composition,” Applied Surface Science, Vol. 178, No. 1, 2001, pp. 190-193.
[7]	B. Thangaraju and P. Kaliannan, “Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis,” Crystal Research and Technology, Vol. 35, No. 1, 2000, pp. 71-75. doi:10.1002/(SICI)1521-4079(200001)35:1<71::AID-CRAT71>3.0.CO;2-U
[8]	N. I. Aly, A. A. Ibrahim and A. S. Riad, “Carrier Transport Mechanisms of a-GaAs/n-Si Heterojunctions,” Egypt Journal of Solids, Vol. 24, No. 2, 2001, pp. 245-254.
[9]	N. Sankara, R. Vivek, R. Sriram and B. Santhi, “Investigations on Nanoporous Silicon for Gas Sensor Application,” Proceedings of the 3rd International Conference on Hardware/Software Codesign and System Synthesis, Jersey City, Vol. 14, 19-21 September 2005, pp. 92-97.
[10]	L. T. Canham, “Properties of Porous Silicon,” Institution of Engineering and Technology, Stevenage, 1997.
[11]	A. S. Grove, “Physics and Technology of Semiconductor Devices,” John Wiley and Sons, Hoboken, 1967.