Author(s)

Alexander Buzynin^1*, Yury Buzynin², Vladimir Shengurov³, Vladimir Voronkov⁴, Ansgar Menke⁵, Albert Luk’yanov⁶, Vitaly Panov¹, Nickolay Baidus³

¹Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia.
²Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia.
³Lobachevski State University, Nizhny Novgorod, Russia.
⁴SunEdison, Milano, Italy.
⁵Academy of Science and Education Maico-Mannesmann, Hannover, Germany.
⁶Lomonosov Moscow State University, Moscow, Russia.

In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside; 2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 10⁵ cm^-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained; 3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.

Solar Cells, Green Technologies, p-n Junctions, Ar Ion-Irradiation, Inversion of Conductivity, Silicon, III-V, GaAs on Si, Ge Buffer, YSZ, Antireflection Coatings

Buzynin, A. , Buzynin, Y. , Shengurov, V. , Voronkov, V. , Menke, A. , Luk’yanov, A. , Panov, V. and Baidus, N. (2017) Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi. Green and Sustainable Chemistry, 7, 217-233. doi: 10.4236/gsc.2017.73017.