Author(s)

Nadia Chahmat, Ammar Haddad, Azzedine Ain-Souya, Rachid Ganfoudi, Nadir Attaf, Mokhtar Ghers

Laboratory of Surfaces and Interfaces (LESIMS), Department of Physics, Faculty of Science, University Badji Mokhtar of Annaba, Annaba, Algeria.
Laboratory of Thin Films Surfaces and Interface, Faculty of Science, Department of Physics, University Mentouri of Constantine, Constantine, Algeria.

Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show preferential grains orientation along the direction (002). Microstructural analysis indicates that the thickness of the deposited films is independent of Sn content, i.e. 408 nm, and that the average grain size increases with increasing Sn content, ranging from 31 nm to 42 nm. The value of the optical gap obtained using UV-visible transmission spectroscopy method increases slightly from 3.1 eV to 3.3 eV. Moreover, transmission curves reveal that the prepared thin films are transparent in the visible domain.

ZnO Thin Films; Ultrasonic Spray; Semiconductor doping; Optical Gap

N. Chahmat, A. Haddad, A. Ain-Souya, R. Ganfoudi, N. Attaf and M. Ghers, "Effect of Sn Doping on the Properties of ZnO Thin Films Prepared by Spray Pyrolysis," Journal of Modern Physics, Vol. 3 No. 11, 2012, pp. 1781-1785. doi: 10.4236/jmp.2012.311222.