Author(s)

Vijay Ramkrishna Chinchamalatpure, Sunil Madhavrao Chore, Shikant Sahebrao Patil, Gajanan Niranjan Chaudhari

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The ZrO₂ thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO₂ thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO₂ films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO₂ thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO₂/Si Systems.

Sol-Gel Technique; ZrO2 Thin Film; C –V; I-V

V. Chinchamalatpure, S. Chore, S. Patil and G. Chaudhari, "Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)," Journal of Modern Physics, Vol. 3 No. 1, 2012, pp. 69-73. doi: 10.4236/jmp.2012.31010.