Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.


Introduction
Operation recombination processes allow to control the number of excess charge carriers in semiconductor.Control of the concentration of charge carriers has special importance at the production of semiconductor devices.There are many types of recombination such as linear recombination and quadratic one, recombination through recombination centers and radiative recombination [1]- [3].When recombination goes through recombination centers, the transition of the charge carriers from a free state to a bound one is independent of the presence of excess charge carriers of opposite sign.This means that there is no direct connection of an electron and the hole, that is, to complete the act first capturing one sign carrier by trap takes place and then capturing of the opposite sign does.There are many internal and external factors contributing to the growth and reduction of recombination centers.Changing the number of recombination centers may be undesirable for semiconductor devices and can disable them.In order to prevent interruption in the semiconductor devices work, it is necessary to conduct diagnostic of generation-recombination processes, and if it is necessary, re-place them.The process of generation and recombination is similar to the oscillatory process, since the increase and the decrease of concentration of charge carriers occur periodically.For analysis of oscillatory processes, phase portraits (PhP) are used effectively, because they give the most complete picture of what is happening.In [4] using PhP the influence of frequency of variable deformation on the concentration of charge carriers in semiconductor illuminated by its forbidden zone's light, it is shown that the frequency of the variable deformation has a strong influence on the shape of the PhP.However, in [4] influence of recombination centers in the form of PhP is not investigated.In this paper, we investigate influence of the change of recombination centers in the semiconductor by PhP.

The Continuity Equation Taking into Account the Combined Effects of Light and Variable All-Round Deformation
The continuity equation expressing the change of concentration of charge carriers is described by the following expression where g-rate of generation of charge carriers, r-rate of recombination of charge carriers, q-charge of electron, n I -the current density of electrons.In uniform sample, the continuity equation has the following form where m ν -the frequency of its forbidden zone's light [1] [3] [6] A-certain coefficient which is defined by the following expression ( ) for direct allowed transitions Let's consider the case when deformation of all-round strain effects on the semiconductor.When the deformation of band gap changes as follows [7]- [9] ( ) here Ξ -the constant of the deformation potential, ε-relative deformation.In the case ( ) the absorption coefficient becomes ( ) . If the deformation changes periodically ( ) here ω d frequency of variable deformation, here generation at light ( ) ( ) . Equation (2) for this case is as follows: ( ) At direct unpermitted transition frequency dependence of the absorption coefficient ( ) where m ν -frequency of its forbidden zone's light, B-coefficient that is defined by the following expression ( ) Equation (2) for direct unpermitted transition will be as follows: ( ) Taking into account the permitted and unpermitted direct transition continuity equation takes the form ( ) ( ) ( ) ( ) Let's consider the case where the recombination through recombination centers takes place.According to statistics of the Shockley-Read, the rate of recombination is described by the expression:  in which will returns periodically at the process of variable deformation of the sample (see Figure 1 and Figure 2, point 1).As the deformation increases of the carrier concentration will increase and reach its peak .Further, when the strain is completely takes off the concentration takes minimum value .This process will continue in this way until all parameters of the oscillatory system remain constant, and the phase portrait will take the form of a closed loop.At prolonged effect of the strain, especially if the deformation is variable there is the probability of increase of recombination centers.The appearance of new defects and structural changes in the semiconductor caused by fatigue and wear material promote it.Let's consider the effect of changes in the concentration of recombination centers in the form of phase portraits.Let the concentration of recombination centers grows increases from 2 × 10 13 cm −3 to 8 × 10 13 cm −3 , in this case the phase portrait will not be in the form of a closed loop, but it will curl into a spiral form (see Figure 3).The maximum value of the carrier concentration will be   .Such decrease of the concentration of charge carriers can be explained by the fact that the generation changes in a constant range, and the range of the recombination increases with time.

Analysis of Phase Portraits
Figure 4 shows the phase portrait for the case when the concentration of recombination centers decreases from 2 × 10 13 cm −3 to 2 × 10 12 cm −3 .In this case, when .Increasing concentration of charge carriers is caused by that the range of the recombination term R in the Equation ( 2) decreases but the range of generation term g remains constant.
Consideration of the phase picture's transformation at the change of the system parameters is very important for understanding the physical processes in the system.Looking at the "phase portrait" under certain given values of the parameters it is possible to imagine all the possible movements in the system for any initial values.While you observe the modification in the picture at the change of the parameters, you represent all advances that the given physical system can have for all possible values of the parameters.For example, the location and nature of the singular points on the phase plane make possible to do a number of conclusions about the processes in the system.
Research of generational process by phase portraits method has practical importance because the phase portraits give the most complete picture of what is happening in the semiconductor.This allows make diagnostics of semiconductor devices and to replace them timely for preventing interruption of their work.  .
its forbidden zone's light semiconductor becomes sensitive to external influences change of the absorption coefficient contributes to that[5].At radiation generation is expressed by the following expression s -intensity of the light, h-Planck's constant, ν -the frequency of the light.With the express permission of the transition frequency dependence of the absorption coefficient is the effective mass of electrons and holes, respectively n -the index of refraction of the light, c-velocity of the light.
t -the concentration of recombination centers, n c and p c coefficients capture electrons and holes, respectively[1] [3].In this case, the continuity equation is

Let's consider
the effect of deformation on a illuminated semiconductor.Let's assume the following values: the temperature T = 300 K, the band gap Eg = 1.1 eV, the relative deformation ε = 10 −6 , the deformation potential's constant is Ξ = 11.4 eV, lightl's intensity I = 10 18 cm −2 •sek −1 , the effective mass off electron * n m = 0.4•m 0 , were m 0 -mass of free electron, the effective mass of holes * p m = 0.541•m 0 , the coefficient of direct allowed transitions A = 2 × 10 4 [6], the coefficient of unpermitted direct transition B = 1.3 × 10 4 [6], the concentration of recombination centers N t = 2 × 10 13 cm −3 , the electron capture coefficient c n = 4.4 × 10 −10 cm 3 /sek, hole capture coefficient c p = 6.2 × 10 −9 cm 3 /sek, the intrinsic concentration n i = 2.2 × 10 13 cm −3 [6] [10] [11].Let the frequency of the variable all-round compression is ω d = 250 Hz.Let's consider one period of variable strain.Let's consider the phase portrait in 0.3 seconds after the start of a periodic deformation.The beginning of counting out is t = 0.3 sek, because by this time the carrier concentration becomes the stable value, shown in Figure1and Figure2.After this, decrease of the strain begins and the concentration at the point 3 has again significance

4 .
Upon completion of the period of hydrostatic compression at point 5 the concentration again returns to its primary value

Figure 1 .
Figure 1.Dynamics of changes of the concentration of charge the carriers in the period of variable strain.

Figure 2 .
Figure 2. Phase portrait of the concentration (n) of charge carriers versus the rate of change of the charge carrier concentration (dn/dt).

Figure 3 .
Figure 3. Phase portrait n versus dn/dt, for the case when the concentration of recombination centers variers from

Figure 4 .
Figure 4. Phase portrait n versus dn/dt, for the case when the concentration of recombination centers variers from