Prof. Krishna C. Mandal

Electrical Engineering Department

University of South Carolina, Columbia, USA

E-mail: MANDALK@cec.sc.edu

Qualifications

1988 Ph.D., Indian Institute of Technology, Kharagpur, India

Publications (selected)

1. Mohammad A. Mannan, Khai V. Nguyen, Rahmi O. Pak, Cihan Oner, and Krishna C. Mandal, “Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep Level Transient Spectroscopy and Isochronal Annealing Studies,” IEEE Transactions on Nuclear Science, 63, 1083-1090, 2016.
2. Khai V. Nguyen and Krishna C. Mandal, “Ru-induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy,” ECS Journal of Solid State Science and Technology, 5, P3078-P3081, 2016.
3. Rahmi Pak and Krishna C. Mandal, "Defect Levels in Nuclear Detector Grade Cd_0.9Zn_0.1Te Crystals," ECS Journal of Solid State Science and Technology, 5, P3037-P3040, 2016.
4. Sandip Das, Sandeep Chaudhuri, and Krishna C. Mandal, "Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals," ECS Journal of Solid State Science and Technology, 5, P3059-P3063, 2016.
5. Sandip Das, Raghu N. Bhattacharya, and Krishna C. Mandal, “Performance limiting factors of Cu₂ZnSn(S_xSe_1-x)4 solar cells prepared by thermal evaporation,” Solar Energy Materials and Solar Cells, 144, 347-351, 2016.
6. C. R. Schmidtlein, J. N. Turner, M. O. Thompson, K. C. Mandal, I. Haggstrom, J. Zhang, J. L. Humm, D. H. Feiglin, and A. Krol., “Performance modeling of a wearable brain PET (BET) camera,” SPIE Medical Imaging Conference, Proc. SPIE 9788, 978806-1-11, 2016.
7. Sandip Das, Krishna C. Mandal, and Raghu N. Bhattacharya, Invited Book Chapter: Chapter 2 - “Earth-Abundant Cu₂ZnSn(S,Se)₄ (CZTSSe) Solar Cells,” Book Title: Semiconductor Materials for Solar Photovoltaic Cells, Springer Series in Materials Science, Editors: M. Parans Paranthaman, Winnie Wong-Ng, and Raghu N. Bhattacharya, ISBN 978-3-319-20330-0, Vol. 218, pp. 25-74, 2015.
8. Khai V. Nguyen, Mohammad A. Mannan, and Krishna C. Mandal, “Improved n-type 4H-SiC Epitaxial Radiation Detectors by Edge Termination,” IEEE Transactions on Nuclear Science, 62, 3199-3206, 2015.
9. Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and C.W. Lai, “Optical and spin polarization dynamics in GaSe nanoslabs,” Physical Review B 91, 195429-1195429-5, 2015.
10. Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and Chih Wei Lai," Linearly polarized remote-edge luminescence in GaSe nanoslabs," Physical Review Applied, 4, 034008-1034008-7, 2015.
11. Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and Chih Wei Lai,"Exciton spin dynamics in GaSe," Journal of Applied Physics, 118, 113103-1113103-8, 2015.
12. Piyas Samanta and Krishna C. Mandal, “Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling,” Solid-State Electronics, 114, 60-68, 2015.
13. Sandeep K. Chaudhuri, Khai Nguyen, Rahmi O. Pak, Liviu Matei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal, “Large Area Cd_0.9Zn_0.1Te Pixelated Detector: Fabrication and Characterization,” IEEE Transactions on Nuclear Science, 61,793-798, 2014.
14. Krishna C. Mandal, Sandeep K. Chaudhuri, and Khai Nguyen, “Correlation of Deep Levels with Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors,” IEEE Transactions on Nuclear Science, 61, 2338 - 2344, 2014.
15. Sandip Das, Sandeep K. Chaudhuri, Raghu N. Bhattacharya, and Krishna C. Mandal, “Defect levels in Cu2ZnSn(S_1-xSe_x)4 solar cells probed by current mode deep level transient spectroscopy, Applied Physics Letters, 104, 192106-1-4, 2014.
16. Mohammad A. Mannan, Sandeep K. Chaudhuri, Khai Nguyen, and Krishna C. Mandal, “Effect of Z_1/2, EH₅ and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies,” Journal of Applied Physics, 115, 224504-1-6, 2014.
17. Sandip Das and Krishna C. Mandal, “Growth and characterization of kesterite Cu₂ZnSn(S_xSe_1-x)4 crystals for photovoltaic applications,” Materials Research Bulletin, 57, 135-139, 2014.
18. Sandip K. Das and Krishna C. Mandal, “Optical down-conversion in doped ZnSe:Tb³⁺ nanocrystals,” Nanoscale, 5, 913-915, 2013.
19. Krishna C. Mandal, Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russell Terry, “Low energy x-ray and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer,” IEEE Transactions on Nuclear Science, 60, 2888-2893, 2013.
20. Sandeep K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, Liviu Matei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal, “Cd_0.9Zn_0.1Te Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing Gamma Detectors,” IEEE Transactions on Nuclear Science, 60, 2853-2858, 2013.