Prof.
Laurie E. Calvet
Université
de Paris-Sud, France
Email: laurie.calvet@u-psud.fr
Qualifications
2001
Ph.D., Yale University, USA, Applied Physics
1996 M.Sc., Yale University, USA, Applied Physics
1995
B.Sc., Columbia University, New York, USA, Applied Physics
Publications
(Selected)
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L. E. Calvet, G.A. Meshkov, E. Strupiechonski, D. Toubestani, J.P.
Snyder, F. Fortuna, W. Wernsdorfer,“Low temperature transport spectroscopy of
defects using Schottky barrier MOSFETs”, Physica-B 404 5136(2009)
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F. Gaucher, A. Pautrat, S. Autier-Laurent, C. David, L.E. Calvet,
PH. Lecoeur, A.-M. Haghiri-Gosnet,“Fabrication of metallic oxide nanowires”,
Microelectronic Engineering 86 820 (2009).
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L.E. Calvet, J.P. Snyder, W. Wernsdorfer “Probing the Density of
States in a Metal-Oxide-Semicondctuor Field-Effect Transistor” 78 193308
(2008).
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L.E. Calvet, J.P. Snyder, W. Wernsdorfer “Excited State Spectroscopy
of single Pt atoms in Si” Phys Rev B78 195309 (2008) (6 citations)
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L.E. Calvet, W. Wernsdorfer, J.P. Snyder, M.A. Reed “Transport
Spectroscopy of single Pt impurities Boron in silicon using a Schottky barrier
MOSFET” J cond Mat Phys 20 374125 (2008). (2 citation)
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L.E. Calvet, R.G. Wheeler, M.A. Reed “Effect of Local Strain on
Single Acceptors in Si” Physical Review B 76 035319 (2007) (6 citations)
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L.E. Calvet, R.G. Wheeler, M.A. Reed “Observation of the Stark
Effect in a Single Acceptor in Si ”Physical Review Letters 98 096805 (2007).
(23 citations)
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Dirk N. Weiss, Xavier Brokmann, Laurie E. Calvet, Marc A. Kastner,
Moungi G. Bawendi “Multi-island single-electron devices from self-assembled
colloidal nanocrystal chains" Appl Phys Lett 88, 143507 (April 2006) (12
citations)
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L.E. Calvet, R.G. Wheeler, M.A. Reed, “Electron Transport
Measurements of Schottky Barrier Inhomogeneities”, Appl. Phys. Lett. 80,
1761-1764 (March 2002) (29 Citations)
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L.E. Calvet, H. Leubben, T.P. Ma, M.A. Reed, C. Wang, J.P. Snyder,
J.R. Tucker, “Suppression of Leakage Current in Schottky Barrier Metal Oxide
Semiconductor Field Effect Transistors,” J. of Appl Phys., 91, 757-759(Jan
2002) (31 Citations)
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J.G. Wen, Z.P. Huang, D.Z. Wang, J.H. Chen, S.X. Yang, Z.F. Ren,
J.H. Wang, L.E. Calvet, J. Chen, J.F. Klemic, and M.A. Reed. “Growth and
characterization of aligned carbon nanotubes from patterned nickel nanodots and
uniform thin films.” J. Materials Research 16, 3246-3253 (Nov 2001) (44
Citations)
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L.E. Calvet, H. Leubben, M.A. Reed, C. Wang, J.P. Snyder, J.R.
Tucker, “Subthreshold and Scaling in Schottky Barrier MOSFETs,” Superlat. and
Microstruct. 28, 501-506 (2000) (16 Citations)
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A.A. Kozhevnikov, R.J. Schoelkopf, L.E. Calvet, M.J. Rooks, D.E.
Prober, “Shot Noise Measurements in Diffusive Normal Metal-Superconductor (N-S)
Junctions”, J. of Low Temp. Phys. 118, 671-678 (2000) (6 Citations)
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J. Chen, L. Calvet, M.A. Reed, D.W. Carr, D.S. Grubisha, D.W.
Bennett, “Electronic Transport through metal-1,4-phenylene diisocynaide-metal
junctions”, Chem Phys. Lett. 313, 741-748 (Nov 1999) (113 Citations)
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Z. F. Ren, Z. P. Huang, J. W. Xu, D. Z. Wang, J. G. Wen, J. H. Wang,
L. Calvet, J. Chen, J. F. Klemic, M.A. Reed, "Growth of a Single
Free-Standing Carbon Nanotube on Each Nano-Nickel Dot", Appl. Phys. Lett.
75,1086-1088 (Aug 1999) (252 Citations)