Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Tehran, Iran
Laser and Optics Research School, Nuclear Science and Technology Research Institute (NSTRI), Tehran, Iran
Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Tehran, Iran
Copyright © 2017 Reza Karami, Masoud Sabaghi, Massoud Masoumi et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Karami, R. , Sabaghi, M. and Masoumi, M. (2017) A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN.
World Journal of Engineering and Technology,
5, 324-332. doi:
10.4236/wjet.2017.52026.