Journal of Materials Science and Chemical Engineering
Vol.5 No.1(2017), Paper ID 73258, 6
pages
DOI:10.4236/msce.2017.51006
Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers
Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
SST Inc., Yachiyo, Japan
Copyright © 2017 Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Nakaie, H. , Arai, T. , Yamamoto, C. , Arimoto, K. , Yamanaka, J. , Nakagawa, K. and Takamatsu, T. (2017) Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers.
Journal of Materials Science and Chemical Engineering,
5, 42-47. doi:
10.4236/msce.2017.51006.