Journal of Materials Science and Chemical Engineering
Vol.5 No.1(2017), Paper ID 73255, 9
pages
DOI:10.4236/msce.2017.51004
TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon
Junji Yamanaka, Noritaka Usami, Sevak Amtablian, Alain Fave, Mustapha Lemiti, Chiaya Yamamoto, Kiyokazu Nakagawa
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Graduate School of Engineering, Nagoya University, Nagoya, Japan
Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
Center for Creative Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
Copyright © 2017 Junji Yamanaka, Noritaka Usami, Sevak Amtablian, Alain Fave, Mustapha Lemiti, Chiaya Yamamoto, Kiyokazu Nakagawa et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Yamanaka, J. , Usami, N. , Amtablian, S. , Fave, A. , Lemiti, M. , Yamamoto, C. and Nakagawa, K. (2017) TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon.
Journal of Materials Science and Chemical Engineering,
5, 26-34. doi:
10.4236/msce.2017.51004.