Materials Sciences and Applications

Vol.2 No.9(2011), Paper ID 7201, 7 pages

DOI:10.4236/msa.2011.29163

 

Influence of Defects on Low Temperature Diffusion of Boron in SiC

 

Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky

 

 

Copyright © 2011 Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


I. Atabaev, T. Saliev, D. Saidov, V. Pak, K. Juraev, C. Tin, B. Atabaev and V. Giryansky, "Influence of Defects on Low Temperature Diffusion of Boron in SiC," Materials Sciences and Applications, Vol. 2 No. 9, 2011, pp. 1205-1211. doi: 10.4236/msa.2011.29163.

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