World Journal of Condensed Matter Physics

Vol.6 No.4(2016), Paper ID 71727, 7 pages

DOI:10.4236/wjcmp.2016.64027

 

IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition

 

Shin-ichi Kobayashi

 

Department of Electronics and Mechatronics, Tokyo Polytechnic University, Atsugi, Japan

 

Copyright © 2016 Shin-ichi Kobayashi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article

Kobayashi, S. (2016) IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition. World Journal of Condensed Matter Physics, 6, 287-293. doi: 10.4236/wjcmp.2016.64027.
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