Optics and Photonics Journal
Vol.6 No.5(2016), Paper ID 66475, 8
pages
DOI:10.4236/opj.2016.65009
Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers
Caitlin Rouse, John W. Zeller, Harry Efstathiadis, Pradeep Haldar, Jay S. Lewis, Nibir K. Dhar, Priyalal Wijewarnasuriya, Yash R. Puri, Ashok K. Sood
State University of New York Polytechnic Institute, Albany, NY, USA
Magnolia Optical Technologies Inc., Woburn, MA, USA
State University of New York Polytechnic Institute, Albany, NY, USA
State University of New York Polytechnic Institute, Albany, NY, USA
DARPA/MTO, Arlington, VA, USA
US Army Night Vision Sensors and Electronic Division, Fort Belvoir, VA, USA
US Army Research Laboratory, Adelphi, MD, USA
Magnolia Optical Technologies Inc., Woburn, MA, USA
Magnolia Optical Technologies Inc., Woburn, MA, USA
Copyright © 2016 Caitlin Rouse, John W. Zeller, Harry Efstathiadis, Pradeep Haldar, Jay S. Lewis, Nibir K. Dhar, Priyalal Wijewarnasuriya, Yash R. Puri, Ashok K. Sood et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Rouse, C. , Zeller, J. , Efstathiadis, H. , Haldar, P. , Lewis, J. , Dhar, N. , Wijewarnasuriya, P. , Puri, Y. and Sood, A. (2016) Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers.
Optics and Photonics Journal,
6, 61-68. doi:
10.4236/opj.2016.65009.