Open Access Library Journal
Vol.1 No.3(2014), Paper ID 64075, 7
pages
DOI:10.4236/oalib.1100637
The Modelization of the Wet Etching Rate by the Segregation Boron and Phosphorus Distributions in Si/SiO2
Badra Bouabdallah, Yamina Bourezig, Zakia Nabi, Saliha Kheris, Boucif Benichou, Omar Benhelal
Condensed Matter and Sustainable Development Laboratory, Physics Department, University of Sidi-Bel-Abbès, Sidi-Bel-Abbès, Algeria
Electronic’s Department, Materials Elaboration and Characterization Laboratory, University Djillali Liabès, Sidi Bel Abbès, Algeria
Laboratory of Catalysis and Reactive Systems, Physics Department, University Djillali Liabès, Sidi Bel Abbès, Algeria
Electronic’s Department, Materials Elaboration and Characterization Laboratory, University Djillali Liabès, Sidi Bel Abbès, Algeria
Electronic’s Department, Materials Elaboration and Characterization Laboratory, University Djillali Liabès, Sidi Bel Abbès, Algeria
Condensed Matter and Sustainable Development Laboratory, Physics Department, University of Sidi-Bel-Abbès, Sidi-Bel-Abbès, Algeria
Copyright © 2014 Badra Bouabdallah, Yamina Bourezig, Zakia Nabi, Saliha Kheris, Boucif Benichou, Omar Benhelal et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Bouabdallah, B. , Bourezig, Y. , Nabi, Z. , Kheris, S. , Benichou, B. and Benhelal, O. (2014) The Modelization of the Wet Etching Rate by the Segregation Boron and Phosphorus Distributions in Si/SiO
2.
Open Access Library Journal,
1, 1-7. doi:
10.4236/oalib.1100637.