Graphene

Vol.4 No.4(2015), Paper ID 59480, 7 pages

DOI:10.4236/graphene.2015.44009

 

Mono-Vacancy and B-Doped Defects in Carbon Heterojunction Nanodevices

 

Ahlam A. El-Barbary, Mohamed A. Kamel, Khaled M. Eid, Hayam O. Taha, Mohamed M. Hassan

 

Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
Bukairiayh for Science, Qassim University, Qassim, KSA
Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
Physics Department, Faculty of Science, Jazan University, Jazan, KSA

 

Copyright © 2015 Ahlam A. El-Barbary, Mohamed A. Kamel, Khaled M. Eid, Hayam O. Taha, Mohamed M. Hassan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


El-Barbary, A.A., Kamel, M.A., Eid, K.M., Taha, H.O. and Hassan, M.M. (2015) Mono-Vacancy and B-Doped Defects in Carbon Heterojunction Nanodevices. Graphene, 4, 84-90. doi: 10.4236/graphene.2015.44009.

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