Journal of Modern Physics
Vol.6 No.9(2015), Paper ID 58944, 9
pages
DOI:10.4236/jmp.2015.69134
Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus
Yuichi Sato, Shota Ishizaki, Yoshifumi Murakami, Mohamad Idham, Nur Ain, Tatsuya Matsunaga
Department of Electrical and Electronic Engineering, Graduate School of Engineering and Resource Science, Akita University, Akita, Japan
Department of Electrical and Electronic Engineering, Graduate School of Engineering and Resource Science, Akita University, Akita, Japan
Department of Electrical and Electronic Engineering, Graduate School of Engineering and Resource Science, Akita University, Akita, Japan
Department of Electrical and Electronic Engineering, Graduate School of Engineering and Resource Science, Akita University, Akita, Japan
Department of Electrical and Electronic Engineering, Graduate School of Engineering and Resource Science, Akita University, Akita, Japan
Department of Electrical and Electronic Engineering, Graduate School of Engineering and Resource Science, Akita University, Akita, Japan
Copyright © 2015 Yuichi Sato, Shota Ishizaki, Yoshifumi Murakami, Mohamad Idham, Nur Ain, Tatsuya Matsunaga et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Sato, Y. , Ishizaki, S. , Murakami, Y. , Idham, M. , Ain, N. and Matsunaga, T. (2015) Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus.
Journal of Modern Physics,
6, 1289-1297. doi:
10.4236/jmp.2015.69134.