Materials Sciences and Applications
Vol.6 No.3(2015), Paper ID 54374, 5
pages
DOI:10.4236/msa.2015.63025
Effects of Si-Layer-Thickness Ratio on UV-Light-Emission Intensity from Si/SiO2 Multilayered Thin Films Prepared Using Radio-Frequency Sputtering
Kenta Miura, Hitomi Hoshino, Masashi Honmi, Osamu Hanaizumi
Graduate School of Science and Technology, Gunma University, Kiryu, Japan
Graduate School of Science and Technology, Gunma University, Kiryu, Japan
Graduate School of Science and Technology, Gunma University, Kiryu, Japan
Graduate School of Science and Technology, Gunma University, Kiryu, Japan
Copyright © 2015 Kenta Miura, Hitomi Hoshino, Masashi Honmi, Osamu Hanaizumi et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Miura, K. , Hoshino, H. , Honmi, M. and Hanaizumi, O. (2015) Effects of Si-Layer-Thickness Ratio on UV-Light-Emission Intensity from Si/SiO
2 Multilayered Thin Films Prepared Using Radio-Frequency Sputtering.
Materials Sciences and Applications,
6, 215-219. doi:
10.4236/msa.2015.63025.