Journal of Crystallization Process and Technology

Vol.5 No.1(2015), Paper ID 53098, 9 pages

DOI:10.4236/jcpt.2015.51003

 

Low Resistive TiO2 Deposition by LPCVD Using TTIP and NbF5 in Hydrogen-Ambient

 

Satoshi Yamauchi, Kazuhiro Ishibashi, Sakura Hatakeyama

 

Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan

 

Copyright © 2015 Satoshi Yamauchi, Kazuhiro Ishibashi, Sakura Hatakeyama et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Yamauchi, S. , Ishibashi, K. and Hatakeyama, S. (2015) Low Resistive TiO2 Deposition by LPCVD Using TTIP and NbF5 in Hydrogen-Ambient. Journal of Crystallization Process and Technology, 5, 15-23. doi: 10.4236/jcpt.2015.51003.

Copyright © 2025 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.