World Journal of Condensed Matter Physics

Vol.4 No.3(2014), Paper ID 49396, 13 pages

DOI:10.4236/wjcmp.2014.43021

 

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

 

Gulmurza Abdurakhmanov

 

The Institute of Power Engineering and Automation, The Uzbek Academy of Sciences, Tashkent, Uzbekistan

 

Copyright © 2014 Gulmurza Abdurakhmanov et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article

Abdurakhmanov, G. (2014) On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity. World Journal of Condensed Matter Physics, 4, 166-178. doi: 10.4236/wjcmp.2014.43021.
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