Journal of Modern Physics

Vol.5 No.12(2014), Paper ID 48116, 7 pages

DOI:10.4236/jmp.2014.512114

 

Negative Resistance Region 10 nm Gate Length on FINFET

 

Maryam Nezafat, Omid Zeynali, Daruosh Masti

 

Sama Technical and Vocational College, Islamic Azad University, Kazeroon Branch, Kazeroon, Iran
Department of Engineering, Islamic Azad University, Bushehr, Iran
Islamic Azad University, Science and Research Branch, Bushehr, Iran

 

Copyright © 2014 Maryam Nezafat, Omid Zeynali, Daruosh Masti et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Nezafat, M. , Zeynali, O. and Masti, D. (2014) Negative Resistance Region 10 nm Gate Length on FINFET. Journal of Modern Physics, 5, 1117-1123. doi: 10.4236/jmp.2014.512114.

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