Modeling and Numerical Simulation of Material Science
Vol.4 No.3(2014), Paper ID 47777, 9
pages
DOI:10.4236/mnsms.2014.43013
Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors
Jihen Chermiti, Sawsen Azzouzi, Mounir Ben Ali, Mhamed Trabelsi, Abdelhamid Errachid
Higher Institute of Applied Sciences and Technology of Sousse, University of Sousse, Sousse, Tunisia; Laborory Materials Molecules and Applications, University of Carthage, IPEST, Tunis, Tunisia
Higher Institute of Applied Sciences and Technology of Sousse, University of Sousse, Sousse, Tunisia; Laborory Materials Molecules and Applications, University of Carthage, IPEST, Tunis, Tunisia
Higher Institute of Applied Sciences and Technology of Sousse, University of Sousse, Sousse, Tunisia; Laborory Materials Molecules and Applications, University of Carthage, IPEST, Tunis, Tunisia
Higher Institute of Applied Sciences and Technology of Sousse, University of Sousse, Sousse, Tunisia
Institute of Analytical Sciences of Lyon, Université Claude Bernard Lyon 1, Lyon, France
Copyright © 2014 Jihen Chermiti, Sawsen Azzouzi, Mounir Ben Ali, Mhamed Trabelsi, Abdelhamid Errachid et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Chermiti, J. , Azzouzi, S. , Ali, M. , Trabelsi, M. and Errachid, A. (2014) Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors.
Modeling and Numerical Simulation of Material Science,
4, 119-127. doi:
10.4236/mnsms.2014.43013.