Department of Electronics, Faculty of Science and Technology, Khenchela University, Khenchela, Algeria; MoDERNa Laboratory, University of Constantine 1, Constantine, Algeria
MoDERNa Laboratory, University of Constantine 1, Constantine, Algeria
MoDERNa Laboratory, University of Constantine 1, Constantine, Algeria
Copyright © 2014 Beddiaf Abdelaziz, Kerrour Fouad, Salah Kemouche et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Abdelaziz, B. , Fouad, K. and Kemouche, S. (2014) The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor.
Journal of Sensor Technology,
4, 59-65. doi:
10.4236/jst.2014.42007.