Journal of Crystallization Process and Technology

Vol.4 No.2(2014), Paper ID 44500, 10 pages

DOI:10.4236/jcpt.2014.42011

 

Low Pressure Chemical Vapor Deposition of Nb and F Co-Doped TiO2 Layer

 

Satoshi Yamauchi, Shouta Saiki, Kazuhiro Ishibashi, Akie Nakagawa, Sakura Hatakeyama

 

Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan

 

Copyright © 2014 Satoshi Yamauchi, Shouta Saiki, Kazuhiro Ishibashi, Akie Nakagawa, Sakura Hatakeyama et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Yamauchi, S. , Saiki, S. , Ishibashi, K. , Nakagawa, A. and Hatakeyama, S. (2014) Low Pressure Chemical Vapor Deposition of Nb and F Co-Doped TiO2 Layer. Journal of Crystallization Process and Technology, 4, 79-88. doi: 10.4236/jcpt.2014.42011.

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