Modeling and Numerical Simulation of Material Science
Vol.4 No.1(2014), Paper ID 42129, 16
pages
DOI:10.4236/mnsms.2014.41007
Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication
Noureddine Sfina, Naima Yahyaoui, Moncef Said, Jean-Louis Lazzari
Department of Physics, Faculty of Sciences of Monastir, Laboratory of Condensed Matter and Nanosciences (LMCN), Monastir, Tunisia
Department of Physics, Faculty of Sciences of Monastir, Laboratory of Condensed Matter and Nanosciences (LMCN), Monastir, Tunisia
Department of Physics, Faculty of Sciences of Monastir, Laboratory of Condensed Matter and Nanosciences (LMCN), Monastir, Tunisia
Interdisciplinary Nanoscience Centre of Marseille (CINaM), Aix-Marseille University, Marseille, France
Copyright © 2014 Noureddine Sfina, Naima Yahyaoui, Moncef Said, Jean-Louis Lazzari et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
N. Sfina, N. Yahyaoui, M. Said and J. Lazzari, "Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication,"
Modeling and Numerical Simulation of Material Science, Vol. 4 No. 1, 2014, pp. 37-52. doi:
10.4236/mnsms.2014.41007.