Journal of Computer and Communications
Vol.1 No.7(2013), Paper ID 40274, 6
pages
DOI:10.4236/jcc.2013.17010
Study on the Luminescence Properties of the Strain Compensated Quantum Well
Tao Liu, Jianjun Li, Jiachun Li, Jun Han, Jun Deng, Linjie He, Shengjie Lin
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Beijing, China.
Copyright © 2013 Tao Liu, Jianjun Li, Jiachun Li, Jun Han, Jun Deng, Linjie He, Shengjie Lin et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Liu, T. , Li, J. , Li, J. , Han, J. , Deng, J. , He, L. and Lin, S. (2013) Study on the Luminescence Properties of the Strain Compensated Quantum Well.
Journal of Computer and Communications,
1, 40-45. doi:
10.4236/jcc.2013.17010.