Engineering

Vol.5 No.11A(2013), Paper ID 38294, 8 pages

DOI:10.4236/eng.2013.511A001

 

A New Model for the Etching Characteristics of Corners Formed by Si{111} Planes on Si{110} Wafer Surface

 

Prem Pal, Sajal Sagar Singh

 

MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology, Hyderabad, India
MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology, Hyderabad, India

 

Copyright © 2013 Prem Pal, Sajal Sagar Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


P. Pal and S. Singh, "A New Model for the Etching Characteristics of Corners Formed by Si{111} Planes on Si{110} Wafer Surface," Engineering, Vol. 5 No. 11A, 2013, pp. 1-8. doi: 10.4236/eng.2013.511A001.

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