World Journal of Condensed Matter Physics

Vol.3 No.4(2013), Paper ID 37903, 5 pages

DOI:10.4236/wjcmp.2013.34026

 

Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”

 

Dayane Habib, Roy Al Asmar, Ziad El Helou, Georges El Haj Moussa

 

Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon
Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon
Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon
Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon; Centre Electronique et Micro-Opto- électronique de Montpellier (CEM2), Faculté Sciences et Techniques du Languedoc, Université de Montpellier II, Montpellier, France

 

Copyright © 2013 Dayane Habib, Roy Al Asmar, Ziad El Helou, Georges El Haj Moussa et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Habib, D. , Asmar, R. , Helou, Z. and Moussa, G. (2013) Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”. World Journal of Condensed Matter Physics, 3, 164-168. doi: 10.4236/wjcmp.2013.34026.

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.