Optics and Photonics Journal
Vol.3 No.2BB(2013), Paper ID 34986, 5
pages
DOI:10.4236/opj.2013.32B051
Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source
K. B. Tynyshtykbaev, V. B. Glazman, M. A. Yeleuov, A. T. Isova, B. A. Rakymetov, D. Muratov, S. Z.Tokmoldin
Institute of Physics and Technology, Almaty, Kazakhstan
Institute of Physics and Technology, Almaty, Kazakhstan
Institute of Physics and Technology, Almaty, Kazakhstan
Institute of Physics and Technology, Almaty, Kazakhstan
Institute of Physics and Technology, Almaty, Kazakhstan
Institute of Physics and Technology, Almaty, Kazakhstan
Institute of Physics and Technology, Almaty, Kazakhstan
Copyright © 2013 K. B. Tynyshtykbaev, V. B. Glazman, M. A. Yeleuov, A. T. Isova, B. A. Rakymetov, D. Muratov, S. Z.Tokmoldin et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
K. B. Tynyshtykbaev, V. B. Glazman, M. A. Yeleuov, A. T. Isova, B. A. Rakymetov, D. Muratov and S. Z.Tokmoldin, "Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source,"
Optics and Photonics Journal, Vol. 3 No. 2B, 2013, pp. 217-221. doi:
10.4236/opj.2013.32B051.