Journal of Surface Engineered Materials and Advanced Technology
Vol.3 No.2(2013), Paper ID 30789, 5
pages
DOI:10.4236/jsemat.2013.32017
Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation through Changing Position of Substrates
Zechao Deng, Qingshan Luo, Ziqiang Hu, Xiaolong Zhang, Xuecheng Ding, Lizhi Chu, Yinglong Wang
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
Key Laboratory of Earthquake Geodesy, Institute of Seismology, CEA, Wuhan, China.
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
Copyright © 2013 Zechao Deng, Qingshan Luo, Ziqiang Hu, Xiaolong Zhang, Xuecheng Ding, Lizhi Chu, Yinglong Wang et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Deng, Z. , Luo, Q. , Hu, Z. , Zhang, X. , Ding, X. , Chu, L. and Wang, Y. (2013) Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation through Changing Position of Substrates.
Journal of Surface Engineered Materials and Advanced Technology,
3, 133-137. doi:
10.4236/jsemat.2013.32017.