Journal of Surface Engineered Materials and Advanced Technology

Vol.3 No.2(2013), Paper ID 30789, 5 pages

DOI:10.4236/jsemat.2013.32017

 

Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation through Changing Position of Substrates

 

Zechao Deng, Qingshan Luo, Ziqiang Hu, Xiaolong Zhang, Xuecheng Ding, Lizhi Chu, Yinglong Wang

 

College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
Key Laboratory of Earthquake Geodesy, Institute of Seismology, CEA, Wuhan, China.
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China
College of Physics Science and Technology, Hebei University. Key Laboratory of Photo-Electronics Information Materials of Hebei Province, Baoding, China

 

Copyright © 2013 Zechao Deng, Qingshan Luo, Ziqiang Hu, Xiaolong Zhang, Xuecheng Ding, Lizhi Chu, Yinglong Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Deng, Z. , Luo, Q. , Hu, Z. , Zhang, X. , Ding, X. , Chu, L. and Wang, Y. (2013) Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation through Changing Position of Substrates. Journal of Surface Engineered Materials and Advanced Technology, 3, 133-137. doi: 10.4236/jsemat.2013.32017.

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