Advances in Materials Physics and Chemistry

Vol.3 No.1A(2013), Paper ID 30386, 7 pages

DOI:10.4236/ampc.2013.31A012

 

XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition

 

N. Matsunami, H. Kakiuchida, M. Sataka, S. Okayasu

 

Energy Science Division, EcoTopia Science Institute, Nagoya University, Nagoya, Japan
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Japan
Japan Atomic Energy Agency (JAEA), Tokai, Japan
Japan Atomic Energy Agency (JAEA), Tokai, Japan

 

Copyright © 2013 N. Matsunami, H. Kakiuchida, M. Sataka, S. Okayasu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


N. Matsunami, H. Kakiuchida, M. Sataka and S. Okayasu, "XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition," Advances in Materials Physics and Chemistry, Vol. 3 No. 1A, 2013, pp. 101-107. doi: 10.4236/ampc.2013.31A012.

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