World Journal of Condensed Matter Physics

Vol.3 No.1(2013), Paper ID 28308, 3 pages

DOI:10.4236/wjcmp.2013.31007

 

Intervalley Scattering of Electrons in n-Si at T = 77 ÷ 450 K

 

Valerii Ermakov, Volodymyr Kolomoets, Leonid Panasyuk, Baja Orasgulyev

 

V. Lashkaryov Institute for Semiconductor Physics NAS of Ukraine, Kiev, Ukraine
V. Lashkaryov Institute for Semiconductor Physics NAS of Ukraine, Kiev, Ukraine
V. Lashkaryov Institute for Semiconductor Physics NAS of Ukraine, Kiev, Ukraine
Caspian State University, Aktau, Kazakhtan

 

Copyright © 2013 Valerii Ermakov, Volodymyr Kolomoets, Leonid Panasyuk, Baja Orasgulyev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


V. Ermakov, V. Kolomoets, L. Panasyuk and B. Orasgulyev, "Intervalley Scattering of Electrons in n-Si at T = 77 ÷ 450 K," World Journal of Condensed Matter Physics, Vol. 3 No. 1, 2013, pp. 43-45. doi: 10.4236/wjcmp.2013.31007.

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