Journal of Electromagnetic Analysis and Applications

Vol.2 No.6(2010), Paper ID 2147, 5 pages

DOI:10.4236/jemaa.2010.26046

 

Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV

 

Svetlana N. Svitasheva

 

 

Copyright © 2010 Svetlana N. Svitasheva et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


S. Svitasheva, "Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV," Journal of Electromagnetic Analysis and Applications, Vol. 2 No. 6, 2010, pp. 357-361. doi: 10.4236/jemaa.2010.26046.

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