Engineering

Vol.4 No.7(2012), Paper ID 20535, 4 pages

DOI:10.4236/eng.2012.47049

 

Steady State Temperature Study on RF LDMOS with Structure Modification

 

Xiaohong Sun, Haodong Wu, Qiang Chen, Huai Gao

 

National ASIC System Engineering Center, Southeast University, Nanjing, China
Key Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University,Nanjing, China
Department of Electronic System, the Royal Institute of Technology-KTH, Stockholm, Sweden
National ASIC System Engineering Center, Southeast University, Nanjing, China

 

Copyright © 2012 Xiaohong Sun, Haodong Wu, Qiang Chen, Huai Gao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


X. Sun, H. Wu, Q. Chen and H. Gao, "Steady State Temperature Study on RF LDMOS with Structure Modification," Engineering, Vol. 4 No. 7, 2012, pp. 379-383. doi: 10.4236/eng.2012.47049.

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