Vol. No.(), Paper ID 13811, 4 pages

DOI:

 

Influence of the Growth Temperature of Si Buffer Layers on Ge Quantum Dots

 

Hong-xing Pan, Chong Wang, Fei Xiong, Xue-gui Zhang, Jie Yang, Tian-xin Li

 

Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

 

Copyright © Hong-xing Pan, Chong Wang, Fei Xiong, Xue-gui Zhang, Jie Yang, Tian-xin Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

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