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Enhanced anti-biofilm activity of the minocycline-and-gallium-nitrate using niosome wrapping against Acinetobacter baumannii in C57/BL6 mouse pneumonia model
International Immunopharmacology,
2023
DOI:10.1016/j.intimp.2022.109551
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[2]
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Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate
Semiconductor Science and Technology,
2023
DOI:10.1088/1361-6641/acce5d
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[3]
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Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0002718
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[4]
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Enhanced anti-biofilm activity of the minocycline-and-gallium-nitrate using niosome wrapping against Acinetobacter baumannii in C57/BL6 mouse pneumonia model
International Immunopharmacology,
2023
DOI:10.1016/j.intimp.2022.109551
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[5]
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Si–Sn Codoped N-Gan Film Grown on an Amorphous Glass Substrate with Dc-Pulse Sputtering
SSRN Electronic Journal ,
2022
DOI:10.2139/ssrn.4122870
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[6]
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A novel preparation of GaN-ZnO/g-C3N4 photocatalyst for methylene blue degradation
Chemical Physics Letters,
2021
DOI:10.1016/j.cplett.2020.138191
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A novel preparation of GaN-ZnO/g-C3N4 photocatalyst for methylene blue degradation
Chemical Physics Letters,
2021
DOI:10.1016/j.cplett.2020.138191
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[8]
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Response of structural and optical properties against proton irradiation in AlN:Tm thin films
Radiation Physics and Chemistry,
2021
DOI:10.1016/j.radphyschem.2020.109234
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[9]
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Fabrication and characterization of gallium nitride thin film deposited on a sapphire substrate for photoelectrochemical water splitting applications
Optik,
2020
DOI:10.1016/j.ijleo.2020.165410
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[10]
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TVA ile üretilen Cam / GaN / InGaN Filmin Artan Tavlama Sıcaklığının Bazı Fiziksel Özelliklerine Etkileri
Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi,
2020
DOI:10.18185/erzifbed.541448
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[11]
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P-type GaN powders obtained by nitridation of Ga-Mg liquid metallic solution
Journal of Alloys and Compounds,
2019
DOI:10.1016/j.jallcom.2018.09.174
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Zinc doping of Ga-rich GaN powders obtained by nitridation of the Ga-Zn liquid metallic solution
Journal of Alloys and Compounds,
2019
DOI:10.1016/j.jallcom.2018.12.332
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Improving polycrystalline GaN by controlling annealing temperature of ScN interlayer
Materials Research Express,
2019
DOI:10.1088/2053-1591/ab0a8b
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[14]
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Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method
Particulate Science and Technology,
2018
DOI:10.1080/02726351.2017.1368753
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[15]
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Influence of ammonia flow rate for improving properties of polycrystalline GaN
Superlattices and Microstructures,
2018
DOI:10.1016/j.spmi.2018.04.024
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Processing and characterization of a free-standing bulk polycrystalline GaN layer
Journal of Alloys and Compounds,
2018
DOI:10.1016/j.jallcom.2018.07.251
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Deposition of a polycrystalline GaN layer on a porous Si/Si substrate by an electron beam evaporator with a successive ammonia annealing treatment
Journal of Alloys and Compounds,
2017
DOI:10.1016/j.jallcom.2016.07.316
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Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients
Superlattices and Microstructures,
2016
DOI:10.1016/j.spmi.2016.05.005
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[19]
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Behavior of Etching Process on Formation of Porous Polycrystalline GaN Layer through Electroless Etching
ECS Journal of Solid State Science and Technology,
2016
DOI:10.1149/2.0121610jss
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[20]
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Optoelectronic properties of Indium-assisted Gallium Nitride Nanowires
2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE),
2015
DOI:10.1109/ICMOCE.2015.7489720
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Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature
Nanoscale Research Letters,
2015
DOI:10.1186/s11671-015-0943-y
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Role of pre-annealing treatment in improving the porosity of gallium nitride on cubic silicon (100) substrate
Materials Science in Semiconductor Processing,
2015
DOI:10.1016/j.mssp.2014.10.022
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Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates
Applied Physics Express,
2014
DOI:10.7567/APEX.7.071001
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