Electrical Transport Properties of Bi₂O₃-Doped CoFe₂O₄ and CoHo_0.02Fe_1.98O₄ Ferrites

Hasan Mehmood Khan, Misbah-ul Islam, Irshad Ali, Mazhar-ud-din Rana

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Department of Physics, Bahauddin Zakariya University Multan, Pakistan -60800.

DOI: 10.4236/msa.2011.28146                

Abstract

Two series of CoHo_xFe_2-x O₄ (x = 0.0,0.02) ferrites with Bismuth oxide doping from (0.1-0.3)% were prepared by Co-precipitation technique. X-ray diffraction analysis revealed fcc structure. The lattice constants were found to decrease as the doping of Bi₂O₃increases in both series. An increase in Bismuth oxide concentration from (0.1-0.3%) in CoFe₂O₄, and CoHo_0.02Fe_1.98O₄ferrites leads to an increase in room temperature resistivity. Temperature dependent resistivity decreases as the temperature increases following the Arrhenius equation. The activation energy increases with the increase of Bi₂O₃-concentration for both CoFe₂O₄ and CoHo_0.02Fe_1.98O₄series. The frequency dependant dielectric constant follows the Maxwell-Wagner type interfacial polarization. The dielectric loss indicates the normal behavior of these ferrites. SEM analysis shows an increase in grain size with increasing Bismuth concentration.

Keywords

Cobalt Ferrites, Co-Precipitation, Bi Doping, Electrical Properties

Conflicts of Interest

The authors declare no conflicts of interest.

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