[1]
|
P. Avouris, “Carbon Nanotube Electronics,” Elsevier Chemical Physics, Vol. 281, 2002, pp. 429-445.
|
[2]
|
D. Fathi and B. Forouzandeh, “A Novel Approach for Stability Analysis in Carbon Nanotube Interconnects,” IEEE Electron Device Letters, Vol. 30, No. 5, 2009, pp. 475-477. doi:10.1109/LED.2009.2017388
|
[3]
|
P. J. Bruke, “AC Performance of Nanoelectronics: Towards a Ballistic THz Nanotube Transistor,” Elsevier So lid-State Electronics, Vol. 48, 2004, pp. 1981-1986.
|
[4]
|
L. Nougaret, et al., “80 GHz Field-Effect Transistors Produced Using High Purity Semiconducting Single-Walled Carbon Nanotubes,” Applied Physics Letters, Vol. 94, No. 24, 2009, Article ID: 243505. doi:10.1063/1.3155212
|
[5]
|
A. Javey, et al., “Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays,” Nano Letters, Vol. 4, No. 7, 2004, pp. 1319-1322.
doi:10.1021/nl049222b
|
[6]
|
T. Durkop, “Extraordinary Mobility in Semiconducting Carbon Nanotubes,” Nano Letters, Vol. 4, No, 1, 2003, pp. 35-39.
|
[7]
|
P. E. Roche, et al., “Very Low Shot Noise in Carbon Nanotubes,” The European Physics Journal B, Vol. 28, No. 2, 2002, pp. 217-22. doi:10.1140/epjb/e2002-00223-9
|
[8]
|
L. C. Castro, et al., “Extrapolated fmax for Carbon Nano tube Field-Effect Transistors,” IOP Nanotechnology, Vol. 17, No. 1, 2005, pp. 300-304.
doi:10.1088/0957-4484/17/1/051
|
[9]
|
J. E. Baumgardner, et al., “Inherent Linearity in Carbon Nanotube Filed-Effect Transistors,” Applied Physics Letters, Vol. 91, 2007.
|
[10]
|
S. Fregonese, et al., “Computationally Efficient Physics Based Compact CNTFET Model for Circuit Design,” IEEE Transactions on Electron Devices, Vol. 55, No. 6, 2008, pp. 1317-1327. doi:10.1109/TED.2008.922494
|
[11]
|
X. Yang, et al., “Modeling and Performance Investigation of the Double-Gate Carbon-Gate Nanotube Transistor,” IEEE Electron Devices Letters, Vol. 32, No. 3, 2011, pp. 231-233. doi:10.1109/LED.2010.2095826
|
[12]
|
J. Deng, et al., “A Compact SPICE Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Its Application-Part I: Model of the Intrinsic Channel Region,” IEEE Transactions on Electron Devices, Vol. 54, No. 12, 2007, pp. 3186-3194.
doi:10.1109/TED.2007.909030
|
[13]
|
J. Deng, et al., “A Compact SPICE Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Its Application-Part II: Full Device Model and Circuit Performance Benchmarking,” IEEE Transactions on Electron Devices, Vol. 54, No. 12, 2007, pp. 3195-3205.
doi:10.1109/TED.2007.909043
|
[14]
|
J. Chen, et al., “Self-Aligned Carbon Nanotube Transistors with Charge Transfer Doping,” Applied Physics Letters, Vol. 86, 2005.
|
[15]
|
J. Guo, et al., “Assessment of High-Frequency Perform ance Potential of Carbon Nanotube Transistors,” IEEE Transactions on Nanotechnology, Vol. 4, No. 6, 2005, pp. 715-721. doi:10.1109/TNANO.2005.858601
|
[16]
|
A. Raychowdhury, et al., “A Circuit Model for Carbon Nanotube Interconnects: Comparative Study with Cu Interconnects for Scaled Technologies,” IEEE/ACM International Conference on Computer Aided Design, January 2005, pp. 237-240.
|
[17]
|
G. Cho, et al., “Assessment of CNTFET Based Circuit Performance and Robustness to PVT Variations,” IEEE International Midwest Symposium on Circuits and Systems, Cancun, 2-5 August 2009, pp. 1106-1109.
|
[18]
|
A. Javey, et al., “Carbon Nanotube Transistors Arrays for Multistage Complementary Logic and Ring Oscillator,” Nano Letters, Vol. 2, No. 9, 2002, pp. 929-932.
|
[19]
|
Z. Chen, et al., “High Performance Carbon Nanotube Ring Oscillator,” Device Research Conference, February 2007, pp. 171-172.
|
[20]
|
A. A. Pesetski, et al., “A 500 MHz Carbon Nanotube Transistor Oscillator,” Applied Physics Letters, Vol. 93, No. 24, 2008, Article ID: 243301. doi:10.1063/1.2988824
|