Simulation Study of 50 nm Gate Length MOSFET Characteristics

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Advances in Materials Physics and Chemistry

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"Simulation Study of 50 nm Gate Length MOSFET Characteristics"
written by Towhid Adnan Chowdhury,
published by Advances in Materials Physics and Chemistry, Vol.13 No.6, 2023

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[1]	Reduction of Subthreshold Leakage Using Metal Strip in SGO Double-Gate MOSFET 2023 9th International Conference on Signal Processing and Communication (ICSC), 2023 DOI:10.1109/ICSC60394.2023.10441253