"Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation"
written by M. D. Haque, M. Julkarnain, A. Z. M. Touhidul Islam, N. Kamata,
published by Advances in Materials Physics and Chemistry, Vol.8 No.3, 2018
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