has been cited by the following article(s):
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[1]
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Nonequilibrium Hot-Carrier Transport in Type-II Multiple Quantum Wells for Solar-Cell Applications
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Physical Review …,
2022 |
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[2]
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Hot-carrier dynamics and transport mechanisms in InAs/AlAsSb multiple quantum wells
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2022 |
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[3]
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Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods
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Journal of Electronic Materials,
2018 |
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[4]
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In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
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2017 |
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[5]
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\(\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}\) composite-channel double-gate (DG)-HEMT devices for high-frequency applications
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Journal of Computational Electronics,
2017 |
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[6]
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$ $\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As}/\hbox {InAs}/\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As} $ $ In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As composite-channel …
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Journal of Computational Electronics,
2017 |
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[7]
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$ $\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As}/\hbox {InAs}/\hbox {In} _ {0.7}\hbox {Ga} _ {0.3}\hbox {As} $ $ In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As composite-channel …
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Journal of Computational Electronics,
2017 |
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[8]
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In0. 7Ga0. 3As/InAs/In0. 7Ga0. 3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
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2017 |
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[9]
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THE UNIVERSITY OF HULL
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2016 |
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[10]
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Electronic Transport Properties in Bulk ZnO and Zn1− xMgxO Using Monte Carlo Simulation
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2015 |
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[11]
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Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation
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Global Journal of Science Frontier Research,
2015 |
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[12]
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Steady-state and transient electron transport in bulk ZnO and Zn
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2015 |
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[13]
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Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy
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Applied Physics Letters,
2014 |
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[14]
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Steady-State and Transient Electron Transport in Bulk ZnO and Zn1-xMgxO Semiconductors
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F Nofeli, H Arabshahi, MH Tayarani - erpublication.org,
2014 |
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[15]
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Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
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Applied Physics Letters,
2014 |
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[16]
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Steady-State and transient electron transport in bulk ZnO and Zn1-xMgxO semiconductors'
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2014 |
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[1]
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Nonequilibrium Hot-Carrier Transport in Type-II Multiple Quantum Wells for Solar-Cell Applications
Physical Review Applied,
2022
DOI:10.1103/PhysRevApplied.18.014001
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[2]
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Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods
Journal of Electronic Materials,
2018
DOI:10.1007/s11664-018-6535-8
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[3]
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$$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$
In
0.7
Ga
0.3
As
/
InAs
/
In
0.7
Ga
0.3
As
composite-channel double-gate (DG)-HEMT devices for high-frequency applications
Journal of Computational Electronics,
2017
DOI:10.1007/s10825-017-0991-x
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[4]
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Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy
Applied Physics Letters,
2014
DOI:10.1063/1.4864279
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[5]
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Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy
Applied Physics Letters,
2014
DOI:10.1063/1.4864279
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