Author(s)

I. Kanazawa¹, S. Nakamura¹, R. Maeda²

¹Department of Physics, Tokyo Gakugei University, Tokyo, Japan.
²Institude of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai, Japan.

We discuss hole-induced magnetic solitons and metal-insulator transition of transport properties in diluted magnetic semiconductors Ga_1-xMn_xAs from the standpoint of a field theoretical formulation, and analyze experimental data of transport properties, using the supersymmetry sigma formula and the effective Lagrangian of diffusion model.

Diluted Magnetic Semiconductor, Magnetic Soliton, Metal-Insulator Transition, Localization

Kanazawa, I. , Nakamura, S. and Maeda, R. (2018) Carrier-Induced Magnetic Solitons and Metal-Insulator Transition in Diluted Magnetic Semiconductors Ga_1-xMn_xAs. Journal of Modern Physics, 9, 2437-2442. doi: 10.4236/jmp.2018.914156.