Prof. Ju Gao
Department of Physics
The University of Hong Kong, China
Email: jugao@hku.hk
Qualifications
1992 Ph.D., University of Twente, the Netherlands
1985 M.Sc., Institute of Physics, Chinese Academy of
Science, Beijing, China
1982 B.Sc., Department of Physics, Peking University,
Beijing, China
Publications (Selected)
-
J.F. Wang, Y.C. Jiang, Z.P.Wu, J. Gao; `Modulation of
persistent photoconductivity by electric-field-controlled strain in thin films
ofLa0.39Pr0.24Ca0.37MnO3’, Appl. Phys. Lett., 102, 071913 (2013).
-
J.F. Wang, J. Gao,`Phase
competition induced nonlinear elastoresistance effect in thin films of Pr0.7Sr0.3MnO3’, Appl. Phys. Lett. 100, 131903 (2012).
-
Y. C. Jian, J. Gao, "Positive colossal magnetoresistance observed in Co
doped amorphous carbon/silicon heterostructures", Appl. Phys. Lett. 101, 182401(2012).
-
Guo EJ, Gao J, Lu HB, `Strain-mediated electric-field
control of photoinduced demagnetization in La0.8Ca0.2MnO3 thin films’; Appl. Phys. Lett. 98, 081903 (2011).
-
Z.G. Sheng, J. Gao, Y.P. Sun, `Current-induced resistive
switching effect in oxygen-deficient La0.8Ca0.2MnO3-delta films’; Phys. Rev. B, 79, 014433 (2009).
-
Z.G. Sheng, J. Gao, Y.P. Sun, `Co-action of the electric
field induced strain and polarization effect in La0.7Ca0.3MnO3/PMN-PT
structures’; Phys. Rev. B, 79, 174437 (2009).
-
Z. Luo, J. Gao, A. B. Djurišić, C. T. Yip, and G. B. Zhang;
`Photoelectric response of Schottky barrier in La0.7Ca0.3MnO3/Nb:SrTiO3 heterojunctions’; Appl. Phys. Lett. 92, 182501 (2008).
-
Z. Luo, J.H. Hao, and J. Gao, `Rectifying characteristics
and transport behavior of SrTiO3-d(110)/p-Si(100) heterojunctions’; Appl. Phys. Lett. 91, 062105 (2007).
-
F.X. Hu, J. Gao, `Investigations on electroresistance effect in
epitaxial manganite films using field effect configurations’; Appl. Phys. Lett. 88(13), 132502 (2006).
-
J. Gao, and F. X. Hu, `Current-induced metastable resistive
state in epitaxial thin films of La1− xCaxMnO3 . (x=0.2, 0.3)’; Appl. Phys. Lett. 86, 092504 (2005).
-
F.X. Hu, and J. Gao, `Current-induced asymmetric transport in La0.8Ca0.2MnO3 epitaxial thin films’; Appl. Phys. Lett. 87, 152504 (2005).
-
J.H. Hao, and J. Gao, `Abnormal reduction of Eu ions and luminescence in
CaB2O4: Eu thin films’; Appl. Phys. Lett. 85(17), 3720-3722 (2004).
-
Roy VAL, Djurisic AB, Liu H, Zhang XX, Leung YH, Xie MH, Gao J, Lui HF, Surya C, `Magnetic
properties of Mn doped ZnO tetrapod structures’, Appl. Phys. Lett. 84 (5), 756-758 (2004).
-
F.X. Hu, and J. Gao, `Unusual current-induced electroresistance in
epitaxial thin films of La0.8Ca0.2MnO3’; Phys. Rev. B 69, 212413 (2004).
-
J.H. Hao, J. Gao, and M. Cocivera, `Green, blue, and yellow
cathodoluminescence of Ba2B5O9Cl thin films doped with Tb3+, Tm3+ and Mn2+’, Appl. Phys. Lett. 82, 2224 (2003).
-
J. Gao, S.Q. Shen, T.K. Li, and J.R. Sun, `Current induced
effect on the resistivity of epitaxial thin films of La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3’, Appl. Phys. Lett. 82(26), 4732-4734 (2003).
-
J. Gao, S.Y. Dai, and T.K. Li, `Electronic states of the La0.9Sn0.1MnO3 epitaxial thin films’; Phys. Rev. B 67(15), rapid commiunication, 153403
(2003).
-
J. R. Sun, J. Gao, and L. Kang, `State switching in Bi-doped La0.67Ca0.33MnO3 and the effects of current’; Appl. Phys. Lett. 81, 508-510 (2002).
-
J. Gao, J.L. Sun, S.M. So, W.H. Tang, and T.K. Li, `High-Tc superconducting Josephson junctions
with a continually graded barrier’; Appl. Phys. Lett. 79, 3101-3103 (2001).
-
J. Gao, W.H. Wong, and J. Xhie, `Formation of outgrowths at
the initial growing stage of YBaCuO ultrathin films on ZrO2’; Appl. Phys. Lett. 67, 2232 (1995).
-
J. Gao, Yu. Boguslavskij, B.B.G. Klopman, D. Terpstra, G.J.
Gerritsma, and H. Rogalla, `Characteristics of advanced YBCO/PBCO/YBCO edge
type Josephson juncions', Appl. Phys. Lett. 59(21), 2754 (1991).
-
J. Gao, W.A.M. Aarnink, G.J. Gerritsma, and H. Rogalla,
`Controlled preparation of all high Tc SNS-type edge junctions and dc SQUIDs', Physica C 171, 126 (1990).
-
J. Gao, Y.Z. Zhang, B.R. Zhao, P. Out, and L. Li, `High Tc Y-Ba-Cu-O thin films by ion beam
sputtering’, Appl. Phys. Lett. 52(26), 2675 (1988).