The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals

Full-Text HTML XML Download Download as PDF (Size:420KB) PP. 1413-1419
DOI: 10.4236/jmp.2016.712128    922 Downloads   1,107 Views  

ABSTRACT

The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.

Cite this paper

Yeritsyan, H. , Sahakyan, A. , Grigoryan, N. , Hakhverdyan, E. , Harutyunyan, V. , Sahakyan, V. , Khachatryan, A. , Grigoryan, B. , Avagyan, V. , Amatuni, G. and Vardanyan, A. (2016) The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals. Journal of Modern Physics, 7, 1413-1419. doi: 10.4236/jmp.2016.712128.

References

[1] Vavilov, V.S. (1963) Radiation Influence on the Semiconductors. Phys.-Mat. Edition, Moscow, 264 p. (In Russian)
[2] Vinetskij, V.L. and Kholodar, G.A. (1979) Radiation Physics of Semiconductors. “Naukova Dumka” Edition, Kiev, 333 p. (In Russian)
[3] Leroy, C. and Rancoita, P.G. (2007) Reports on Progress in Physics, 70, 493-625.
http://dx.doi.org/10.1088/0034-4885/70/4/R01
[4] Duzellier, S. (2005) Aerospace Science and Technology, 9, 93-99.
http://dx.doi.org/10.1016/j.ast.2004.08.006
[5] Coleman, P.G., Edwardson, C.J., Knights, A.P. and Gwilliam, R.M. (2012) New Journal of Physics, 14, Article ID: 025007.
http://dx.doi.org/10.1088/1367-2630/14/2/025007
[6] Emtsev, V.V., Ivanov, A.M., et al. (2012) Physics and Technics of Semiconductors, 46, 473-481.
[7] Yeritsyan, H.N., Sahakyan, A.A., Harutyunyan, V.V., et al. (2011) Journal of Spacecraft and Rockets, 48, 34-37.
http://dx.doi.org/10.2514/1.49303
[8] Emtsev, V.V., Ehrhart, P., Poloskin, D.S. and Emtsev, K.V. (2007) Journal of Material Science: Materials in Electronics, 18, 711-714.
http://dx.doi.org/10.1007/s10854-006-9103-6

  
comments powered by Disqus

Copyright © 2017 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.