[1]
|
A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage
IEEE Transactions on Instrumentation and Measurement,
2024
DOI:10.1109/TIM.2023.3335518
|
|
|
[2]
|
Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures
Micromachines,
2024
DOI:10.3390/mi15020171
|
|
|
[3]
|
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method
IEEE Transactions on Electron Devices,
2022
DOI:10.1109/TED.2022.3193889
|
|
|
[4]
|
Graded Strain-Enhanced Pyro-Phototronic Photodetector with Extreme Broad Band
SSRN Electronic Journal ,
2022
DOI:10.2139/ssrn.4021775
|
|
|
[5]
|
Graded strain-enhanced pyro-phototronic photodetector with a broad and plateau band
Nano Energy,
2022
DOI:10.1016/j.nanoen.2022.107163
|
|
|
[6]
|
Electrical characterization of AlGaN/GaN/Si high electron mobility transistors
Journal of Ovonic Research,
2022
DOI:10.15251/JOR.2022.182.159
|
|
|
[7]
|
Graded strain-enhanced pyro-phototronic photodetector with a broad and plateau band
Nano Energy,
2022
DOI:10.1016/j.nanoen.2022.107163
|
|
|
[8]
|
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Microelectronic Engineering,
2021
DOI:10.1016/j.mee.2021.111508
|
|
|
[9]
|
Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method
IEEE Transactions on Electron Devices,
2021
DOI:10.1109/TED.2021.3089449
|
|
|
[10]
|
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Microelectronic Engineering,
2021
DOI:10.1016/j.mee.2021.111508
|
|
|
[11]
|
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors
IEEE Transactions on Device and Materials Reliability,
2021
DOI:10.1109/TDMR.2021.3109088
|
|
|
[12]
|
Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM),
2020
DOI:10.1109/ASDAM50306.2020.9393836
|
|
|
[13]
|
Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS
Semiconductors,
2020
DOI:10.1134/S1063782620100127
|
|
|
[14]
|
Thermal response and correlation between mobility and kink effect in GaN HEMTs
Microelectronic Engineering,
2020
DOI:10.1016/j.mee.2019.111148
|
|
|
[15]
|
Local mismatch and noise investigation for pre and post multilayer pHEMTs
Current Applied Physics,
2020
DOI:10.1016/j.cap.2020.09.006
|
|
|
[16]
|
Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization
Journal of Alloys and Compounds,
2019
DOI:10.1016/j.jallcom.2019.07.234
|
|
|
[17]
|
High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells
Applied Physics Express,
2017
DOI:10.7567/APEX.10.011004
|
|
|
[18]
|
Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs
Silicon,
2017
DOI:10.1007/s12633-015-9337-0
|
|
|
[19]
|
High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells
Applied Physics Express,
2017
DOI:10.7567/APEX.10.011004
|
|
|
[20]
|
Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology
Semiconductor Science and Technology,
2017
DOI:10.1088/1361-6641/aa646f
|
|
|
[21]
|
Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
IEEE Transactions on Electron Devices,
2017
DOI:10.1109/TED.2017.2757516
|
|
|
[22]
|
Effect of access region and field plate on capacitance behavior of GaN HEMT
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC),
2015
DOI:10.1109/EDSSC.2015.7285160
|
|
|
[23]
|
Using vertical capacitance-voltage measurements for fast on-wafer characterization of epitaxial GaN-on-Si material
physica status solidi (a),
2015
DOI:10.1002/pssa.201532341
|
|
|
[24]
|
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
Journal of Alloys and Compounds,
2015
DOI:10.1016/j.jallcom.2015.09.007
|
|
|
[25]
|
Deep traps in GaN-based structures as affecting the performance of GaN devices
Materials Science and Engineering: R: Reports,
2015
DOI:10.1016/j.mser.2015.05.001
|
|
|
[26]
|
Effects of post-annealing on the passivation interface characteristics of AlGaN/GaN high electron mobility transistors
Materials Science in Semiconductor Processing,
2015
DOI:10.1016/j.mssp.2015.02.062
|
|
|
[27]
|
Using vertical capacitance–voltage measurements for fast on‐wafer characterization of epitaxial GaN‐on‐Si material
physica status solidi (a),
2015
DOI:10.1002/pssa.201532341
|
|
|
[28]
|
Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
2014
DOI:10.1116/1.4895840
|
|
|
[29]
|
Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
Optical and Quantum Electronics,
2014
DOI:10.1007/s11082-013-9747-4
|
|
|
[30]
|
Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
2014
DOI:10.1116/1.4895840
|
|
|