"
Clusters of Radiation Defects in Silicon Crystals"
written by Hrant N. Yeritsyan, Aram A. Sahakyan, Norair E. Grigoryan, Vachagan V. Harutunyan, Vahan A. Sahakyan, Armenuhi A. Khachatryan,
published by
Journal of Modern Physics,
Vol.6 No.9, 2015
has been cited by the following article(s):
[1]
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Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers
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Materials,
2022 |
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[2]
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Влияние радиационных дефектов, созданных низкоэнергетическими протонами, на импульсные характеристики кремниевых n+-p-p+ структур
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Современные …,
2021 |
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[3]
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Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures
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2020 |
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[4]
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Modelling of disordering regions in proton-irradiated silicon
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2020 |
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[5]
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Влияние радиационных дефектов, созданных низкоэнергетическими протонами при температуре 83 K, на характеристики кремниевых фотоэлектрических …
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2020 |
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[6]
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Влияние радиационных дефектов, созданных низкоэнергетическими протонами при температуре 83 K, на характеристики кремниевых …
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2020 |
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[7]
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NE Grigoryan, VV Harutyunyan, VM Tsakanov, BA Grigoryan, AS Yeremyan, et al.
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2017 |
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[8]
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Dielectric Characteristics of Pt/BaxSr1-xTiO3/Pt Thin Film Structure under the Electron Beam Irradiation
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Armenian Journal of Physics,
2016 |
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[9]
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Simulation of Electronic Center Formation by Irradiation in Silicon Crystals
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Journal of Electronic Materials,
2016 |
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[10]
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Dielectric Characteristics of Pt/BaxSr1-xTiO3/Pt Thin Film Structure under the Electron Beam Irradiation.
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Armenian Journal of …,
2016 |
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[11]
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The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal
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Journal of Modern Physics,
2015 |
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[1]
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Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals
Journal of Electronic Materials,
2023
DOI:10.1007/s11664-023-10700-7
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[2]
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Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers
Materials,
2022
DOI:10.3390/ma15124052
|
|
|
[3]
|
Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures
Semiconductors,
2020
DOI:10.1134/S1063782620020062
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[4]
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Modelling of disordering regions in proton-irradiated silicon
Journal of Physics: Conference Series,
2020
DOI:10.1088/1742-6596/1553/1/012015
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[5]
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Simulation of Electronic Center Formation by Irradiation in Silicon Crystals
Journal of Electronic Materials,
2017
DOI:10.1007/s11664-016-4975-6
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[6]
|
The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal
Journal of Modern Physics,
2015
DOI:10.4236/jmp.2015.614211
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