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Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK)

Changsha,China,10.16-10.18,2010

ISBN: 978-1-935068-41-9 Scientific Research Publishing, USA

E-Book 2313pp Pub. Date: October 2010

Category: Chemistry & Materials Science

Price: $360

Title: Systematic Study on Luminescence Centers in Silicon Created by Self-Ion Implantation and Thermal Annealing
Source: Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK) (pp 2115-2120)
Author(s): Yu Yang, Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091,
Chong Wang, Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091,
Fei Xiong, Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091,
Liang Li, Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091,
Jie Yang, Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091,
Dong Wei, Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091,
Jie-ming Bao, Department of Electrical and Computer Engineering, University of Houston, 4800 Calhoun Road, Houston, TX 77204，USA
Abstract: We investigated the conditions for the generation of silicon luminescence centers (W-line, R-line and D1-band) by self-ion implantation and thermal annealing. Silicon substrates were implanted with Si ions at an energy of 300 keV to several doses ranging from 1014 cm-2 to 3×1015 cm-2 followed by a thermal annealing at various temperatures up to 900 °C. Luminescence centers and their spatial distributions were probed by measuring their photoluminescence spectra before and after sequential removal of top surface layers. It was found that the optimal annealing temperature for W-line is ~ 300 oC. The strongest R-line is observed in the sample with a dose of 1014 cm-2 and at an annealing temperature of 700 oC. The creation of D1-band requires a minimum dose of 3 × 1014 cm-2 and a minimum annealing temperature of 800 oC. Photoluminescence versus etch depth measurements show that within the range of studied doses for all samples, the W-line luminescence centers are distributed beyond twice the projected ion range (Rp), R-line centers are located slightly deeper than the Rp, and D1-band defects are distributed at about the same depth as Rp These results provide valuable information for the fabrication of silicon-based infrared light sources
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