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Author(s): |
Liang Kang, State Key Lab of Crystal Materials, Shandong University, Jinan, P. R. of China, 250100
Hong-liang Lv, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071,
Yu-ming Zhang, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071,
Yi-men Zhang, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071,
Jun-rui Xu, School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, |