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Author(s): |
Zhi-de Hu, Dept.. of Chemistry and Material Engineering, Logistical engineering University, Chongqing, China ,401311
Hua Yan, Dept.. of Chemistry and Material Engineering, Logistical engineering University, Chongqing, China ,401311 |
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Abstract: |
This paper used the computer and Visual Basic language to simulate the range and the projected range of ion implantation. Taking into account the implantation of different energy (low-energy implatation, high-energy implantation), different ions sorts (light ion implantation, heavy ion implantation), and different targets (light atomic target, heavy atomic target), we simulated many different situation, and try to make the computer simulation meet with the purpose to guide the practical application of reality. The main idea in this paper that used to simulate to calulate ion implantation’s projected range is as follows: 1. The energy of implanted ions was demarcated to different ranges. If implanted ions has a high energy fields(higher than 400 kev), the nuclear stopping effect can be neglected; If the energy of the implanted ions is between 400kev and 100kev,the stopping effect of nuclear and electrons must be considered together; If implanted ions is in low energy fields(lower than 100kev), the electrons stopping effect can be neglected. Therefore, we calculated ions in different energy intervalswith different models so as to improve the accuracy of the calculation. 2. A number of datas were analyzed during the simulation calculation, introducing the corresponding correction coefficient and establishing the correct model of calculation. At the same time, we use Visual Basic with graphic window to write programs. From the results, we can find that the results which we calculated are very similar with the data of experiment. Although the paper only calculate the ranges of ion implantation target that not crystal, however, these methods is suitable to calculate the ranges of other types ions too (for example of multi-crystal ).
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